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M12S16161A1 - 512K x 16Bit x 2Banks Synchronous DRAM

M12S16161A1_4895100.PDF Datasheet


 Full text search : 512K x 16Bit x 2Banks Synchronous DRAM


 Related Part Number
PART Description Maker
T431616D T431616E (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
TMT
A43L0616AV-5.5 5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM
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A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
AMIC Technology
M52D16161A-10TG 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
Elite Semiconductor Memory Technology, Inc.
M12L32321A-7BG M12L32321A-5.5BG M12L32321A-6BG 512K x 32Bit x 2Banks Synchronous DRAM
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K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S 512K x 16Bit x 2 Banks Synchronous DRAM
Samsung Electronic
Samsung semiconductor
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Elite Semiconductor Memory Technology, Inc.
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NANOAMP[NanoAmp Solutions, Inc.]
 
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